Fabrication of pentacene organic field-effect transistors with polyimide gate dielectric layer
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Abstract:
The organic field effect transistors had been fabricated using the pentacene by vacuum evaporation as the active layer, the polyimide by spin coating as insulator layer, and aluminum by vacuum evaporation as gate, source and drain electrodes respectively. The field-effect mobility of 0.079 cm2/V.s was tested at Vds=70 V, and on/off radio up to 1.7×104.
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Clc Number:
TN325.3 TN386.2
