Fabrication and property analysis of AIGaInP red light LED with high bright

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Fabrication and property analysis of AIGaInP red light LED with high bright
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                        Han Jun , Li Jian-jun , Deng Jun , Xing Yan-hui , Yu Xiao-dong , Lin Wei-zhi , Liu Ying and Shen Guang-diHan Jun , Li Jian-jun , Deng Jun , Xing Yan-hui , Yu Xiao-dong , Lin Wei-zhi , Liu Ying and Shen Guang-di

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Clc Number:TN312.8
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Abstract:

The LED with DBR and enhancing transmission film was grown by MOCVD. At 20 mA DC injection current, the LED peak wavelength was 623 nm, the light intensity was 200 mcd, and the output light power was 2.14 mW. The light intensity and output light power have been improved than traditional LED.

Key words:TN312+.8

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Han Jun, Li Jian-jun, Deng Jun, Xing Yan-hui, Yu Xiao-dong, Lin Wei-zhi, Liu Ying, Shen Guang-di. Fabrication and property analysis of AIGaInP red light LED with high bright[J]. Optoelectronics Letters,2007,3(6):417-419

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Received:May 10,2007
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