Organic light-emitting devices based on new rare earth complex Tb(p-CIBA)3phen

Abstract:

A new rare earth complex Tb(p-CIBA)₃phen was synthesized and introduced into organic light emitting devices (OLEDs) as emitting material. The Tb(p-CIBA)₃phen was doped into PVK to improve the film-forming and hole-transporting property. Two kinds of devices were fabricated. The device structure is as the following. Single-layer device: ITO/PVK: Tb(p-CIBA)₃phen/LiF/Al; double-layer device: ITO/PVK: Tb(p-CIBA)₃phen/AIQ/LiF/Al. The performances of both devices were investigated carefully. We found that the emission of PVK was completely restrained, and only the green emission was observed from the electroluminescence. The full width at half maximum (FWHM) was less than 10 nm. The highest EL brightness of the single-layer device is 25.4 cd/cm² at a fixed bias of 18 V, and the highest EL brightness of the double-layer device reaches 234.8 cd/cm² at a voltage of 20 V. Supported by National Natural Science Foundation of China (90 201004), Beijing Science and Technology Foundation (H0304300 20410) and Hebei provice Natural Science Foundation (203148).

Key words:;KeywordHeading";>CLC number TN383