Effects of Ar ion assisted deposition on the optical and electrical characteristics of electron-beam-evaporated amorphous Si films
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Abstract:
In this paper,the effects of Ar ion bombardment during the electron beam evaporation deposition of the amorphous Si film were investigated. It was found that the bombardment increases the light absorption by two to eleven times and increases the conductance of the film by 3 000 times, This has never been reported before of amorphous Si with electron beam evaporation deposition.
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O484.1 O484.41
