Multi-active region laser diode with a narrow beam divergence angle
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Abstract:
A novel large optical cavity laser diode, which consists of multi-active regions cascaded together through tunnel junctions, is proposed. After growing the epi-layers with LP-MOCVD system on GaAs substrate, the ridge waveguide laser structure is fabricated, and it shows a transverse divergence angle as low as 14.4°. This work was supported by special foundations for major state basic research project of China(G20000683-02)
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