Deposition of GaN thin film on ZnO/Si by DIBD method

Abstract:

The GaN thin film is successfully grown on the sample of ZnO/Si by dual ion beams deposition (DIBD) system. The thin film GaN/ZnO/Si is characterized by the in-situ X-ray photoelectron spectroscopy (XPS). It is shown that after a thin GaN film grown on the Zn/Si, the peaks of the Zn and O are not observed. This indicates that the GaN film can be successfully grown on the ZnO/Si by the dual ion beam deposition (DIBD) system associated with the pulsed laser deposition (PLD) method. Supported by the National “863” Program (No. 863-715-001-0162) and by the Science and Technology Foundation of China University of Geosciences (Beijing) (No. 200524).

Key words:;KeywordHeading";>CLC number O484.1