Xia Wei , Li Shu-qiang , Wang Ling , Ma De-ying , Zhang Xin , Wang Fu-xun , Ji Gang , Liu Ding-wen , Ren Zhong-xiang , Xu Xian-gang and Mei Liang-mo
TN248.4
Xia Wei, Li Shu-qiang, Wang Ling, Ma De-ying, Zhang Xin, Wang Fu-xun, Ji Gang, Liu Ding-wen, Ren Zhong-xiang, Xu Xian-gang, Mei Liang-mo.650 nm GalnP/AlGaInP laser diodes with low threshold and compressively strained MQW active layer[J]. Optoelectronics Letters,2006,2(4):263-265
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