650 nm GaInP/AlGaInP laser diodes with low threshold and compressively strained MQW active layer
DOI:
Author:
Affiliation:

Clc Number:

Fund Project:

  • Article
  • |
  • Figures
  • |
  • Metrics
  • |
  • Reference
  • |
  • Related
  • |
  • Cited by
  • |
  • Materials
  • |
  • Comments
    Abstract:

    Reference
    Related
    Cited by
Get Citation

XIA Wei, LI Shu-qiang, WANG Ling, MA De-ying, ZHANG Xin, WANG Fu-xun, JI Gang, LIU Ding-wen, REN Zhong-xiang, XU Xian-gang, MEI Liang-mo.650 nm GaInP/AlGaInP laser diodes with low threshold and compressively strained MQW active layer[J]. Optoelectronics Letters,2006,2(4):

Copy
Share
Article Metrics
  • Abstract:
  • PDF:
  • HTML:
  • Cited by:
History
  • Received:
  • Revised:
  • Adopted:
  • Online:
  • Published: