Transport and electroluminescence mechanism in Au/(Si/SiO2)/P-Si film

Abstract:

The samples of Au/(Si/SiO₂)/p-Si structure were fabricated by using the R. F magnetron sputtering technique. Its carrier transport and electroluminescence mechanism were studied from the I–V curves and EL spectra by using the Configuration Coordinate as a theoretical model. The result indicates that there are two defect centers in SiO₂ films., The electron in Au and the hole in p-Si went into SiO₂ film by the Fowler-Nordheim tunneling model at a high bias voltage and recombined through these defect centers in SiO₂ film.