Influence of substrate temperature on the deposition and structural properties of μc-Si: H thin films fabricated with VHF-PECVD
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Abstract:
With in situ optical emission spectroscopy (OES) diagnosis on VHF-generated H2+SiH4 plasmas, and with the measurements of deposition rate and structure of μc-Si: H thin films fabricated with VHF-PECVD technique at different substracte temperature, influence of substrate temperature on the deposition of μc-Si: H thin film and on its structural properties have been investigated. The results show that with the increase of substrate temperature, the crystalline volume fraction Xc and average grain size d are enhanced monotonously, but the deposition rate increases firstly and then decreases. The optimized substrate temperature for (μc-Si: H thin films deposition under our current growth system is about 210 °C, at which deposition rate 0.8 nm/s of μc-Si: H thin film with Xc?60% and d?9 nm can be obtained.
Hui-dong Yang. Influence of substrate temperature on the deposition and structural properties of μc-Si: H thin films fabricated with VHF-PECVD[J]. Optoelectronics Letters,2005,1(1):21-23